Model: 1N6054A

Diode Semiconductor Device

Special Features:

Forward current (continuous/average) 1ma; max reverse voltage 36v; substrat material-silicium; contact construction-metallurgically bonded; quality level 25; thermal resistance junction to case 10cel/w; max junction temp 175deg c; total power dissipation 1mw; package type d0202aa; package material-metal etanche; package shape-cylindrique, sorties axiales; number of package pins 2

Properties:

End Application
Aircraft applications
Part Name Assigned By Controlling Agency
Transient suppressor and protective diode
NSN
5961-01-576-1705
Part Number
1N6054A
Description
Semiconductor Device,diode
CAGE
07688

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 1N6054A NSN 5961-01-576-1705

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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