Special Features:

Knpn/pnp complimentary pairs; 200 degrees c junction temp; 600/350 mw; 30 vdc collector to emitter voltage; common emitter; large-signal short circuit; forward current; 70 transfer ratio at 150 ma collector current; 0.4 vdc collector to emitter saturation voltage at 150 ma; rms/15 ma dc collector cutoff current; 100 nanoamps emitter open; uni type 200 mhz min freq at which common emitter current gain; 0.335 to 0.370 base dia; 6 wire lead terminals 0.016 to 0.019 in. Dia

Properties:

Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.