Model: MT5C1005C-25XT

Memory Microcircuit

Special Features:

Sram memory array

Properties:

Maximum Power Dissipation Rating
1.0 watts
Operating Tempurature Range
-55.0/+125.0 degrees celsius
Features Provided
Low power and monolithic
Inclosure Material
Ceramic
Inclosure Configuration
Dual-in-line
Output Logic Form
Complementary-metal oxide-semiconductor logic
Voltage Rating And Type Per Characteristic
5.0 volts power source
Time Rating Per Chacteristic
25.00 nanoseconds af output megawatts
Memory Device Type
Ram
Memory Capacity
256k x 4
Terminal Type And Quantity
28 printed circuit
NSN
5962-01-513-6167
Part Number
MT5C1005C-25XT
Description
Microcircuit,memory
CAGE
0EU86

A circuit designed to store information and/or coded instructions for later use. Item has pins or other connections to install in a computer or computing device. does not include magnetic drums, tapes, punched cards or the like. for items that have portable type connections see memory, portable, solid state.

Part MT5C1005C-25XT NSN 5962-01-513-6167

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
41015
FIIG:
A458A0
Concept No.:
1
App. Key:
F
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
BA
CRITL:
X

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Schedule B and Export
  • Schedule B: 8542900000
  • SITC: 77689
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Electronic integrated circuits and microassembly parts

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