Model: MJ8100

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.260 inches
Terminal Length
0.500 inches
Overall Diameter
0.370 inches
Internal Configuration
Junction contact
Internal Junction Configuration
Pnp
Mounting Method
Terminal
Terminal Circle Diameter
Between 0.190 inches and 0.210 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
60.0 collector to base voltage, dc and 60.0 collector to emitter voltage/static/base open and 5.0 emitter to base voltage, instantaneous
Current Rating Per Characteristic
5.00 amperes source cutoff current
Power Rating Per Characteristic
10.0 watts small-signal input power, common-collector absolute
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-100-4676
Part Number
MJ8100
Description
Transistor
CAGE
04713

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part MJ8100 NSN 5961-01-100-4676

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
SPI No.:
SPI Rev.:
SPC Mkg:
99
LVL_A:
G
LVL_B:
R

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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