Model: MBD5057-T80

Diode Semiconductor Device

Special Features:

Series resistance 6.5 ohms

Properties:

Inclosure Material
Ceramic
Overall Length
Between 1.397 inches and 1.651 inches
Overall Diameter
Between 2.997 inches and 3.150 inches
Mounting Method
Press fit
Features Provided
W/heat sink
Semiconductor Material
Germanium
Voltage Rating In Volts Per Characteristic
0.110 forward voltage, average
Current Rating Per Characteristic
3.00 milliamperes forward current, average
Capacitance Rating In Picofarads
0.3
Maximum Operating Tempurature Per Measurement Point
110.0 degrees celsius ambient air
Terminal Type And Quantity
2 binding post
NSN
5961-01-462-9585
Part Number
MBD5057-T80
Description
Semiconductor Device,diode
CAGE
59365

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part MBD5057-T80 NSN 5961-01-462-9585

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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