Model: JANTXV2N6786

Transistor

Properties:

Internal Configuration
Field effect
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-205af
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
400.0 drain to source voltage and 400.0 drain to gate voltage and 400.0 breakdown voltage, drain-to-source, with all other terminals short-circuited to source
Test Data Document
81349-mil-s-19500h specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
Specification Data
81349-mil-s-19500/556b government specification
NSN
5961-01-361-2299
Part Number
JANTXV2N6786
Description
Transistor
CAGE
81349

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part JANTXV2N6786 NSN 5961-01-361-2299

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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