Model: 2N132A

Transistor

Special Features:

Junction pattern arrangement: pnp

Properties:

Inclosure Material
Metal
Overall Length
0.210 inches
Terminal Length
1.500 inches
Overall Height
0.170 inches
Overall Width
0.150 inches
Internal Configuration
Junction contact
Mounting Method
Terminal
Features Provided
Hermetically sealed case
Semiconductor Material
Germanium
Voltage Rating In Volts Per Characteristic
24.0 breakdown voltage, collector-to-emitter, base open and 12.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic
100.00 milliamperes source cutoff current and 15.00 microamperes zero-gate-voltage source current preset
Power Rating Per Characteristic
100.0 milliwatts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
100.0 degrees celsius junction
Terminal Type And Quantity
3 uninsulated wire lead
Specification Data
80131-release2324 professional/industrial association specification
NSN
5961-00-682-8374
Part Number
2N132A
Description
Transistor
CAGE
3B150

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N132A NSN 5961-00-682-8374

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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