Model: 2N1100

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.625 inches
Overall Diameter
1.250 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Internal Junction Configuration
Pnp
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Thread Size
0.190 inches
Semiconductor Material
Germanium
Voltage Rating In Volts Per Characteristic
100.0 collector to base voltage, dc and 80.0 emitter to base voltage, dc
Current Rating Per Characteristic
Between 4.00 amperes source cutoff current and 13.00 amperes source cutoff current and 15.00 amperes source cutoff current blank
Power Rating Per Characteristic
55.0 watts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point
95.0 degrees celsius junction
Thread Series Designator
Unf
Terminal Type And Quantity
2 pin and 1 threaded stud
NSN
5961-00-973-2700
Part Number
2N1100
Description
Transistor
CAGE
16758

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N1100 NSN 5961-00-973-2700

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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