Model: 2312232PC1

Unitized Semiconductor Devices
Description:

Metal inclosure material, 0.140 inches overall length, 0.500 inches terminal length, 0.335 inches overall diameter, amplifier function for which designed.

Properties:

Inclosure Material
Metal
Overall Length
Between 0.140 inches and 0.260 inches
Terminal Length
0.500 inches
Overall Diameter
Between 0.335 inches and 0.370 inches
Function For Which Designed
Amplifier
Component Name And Quantity
2 transistor
Mounting Method
Terminal
Terminal Circle Diameter
Between 0.190 inches and 0.210 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon all transistor
Voltage Rating In Volts Per Characteristic
100.0 collector to base voltage/static/emitter open all transistor and 60.0 collector to emitter voltage/static/base open all transistor and 80.0 collector to emitter reverse voltage all transistor and 7.0 emitter to base voltage, static, collector open all transistor
Current Rating Per Characteristic
500.00 milliamperes source cutoff current all transistor
Power Rating Per Characteristic
3.0 watts small-signal input power, common-collector preset all transistor
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Terminal Type And Quantity
6 uninsulated wire lead
NSN
5961-00-012-5009
Part Number
2312232PC1
Description
Semiconductor Devices,unitized
CAGE
10001

Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.

Part 2312232PC1 NSN 5961-00-012-5009

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
61962
FIIG:
A110A0
Concept No.:
App. Key:
E
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
100.0
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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